Di Francia G, La Ferrara V, Maddalena P, Ninno D, Odierna LP, Cataudella V: AC conductivity of porous silicon: a fractal and surface transport mechanism. Il Nuovo Cimento D 1996, 18:1187–1196. 10.1007/BF02464696CrossRef 9. Lehmann V, Hofmann F, Möller F, Grüning U: Resistivity of porous silicon: a surface effect. Thin Solid Films 1995, 255:20–22. 10.1016/0040-6090(94)05624-MCrossRef
10. Boarino L, Borini S, Amato G: Electrical properties of mesoporous silicon: from a surface FDA approved Drug Library effect to coulomb blockade and more. J Electrochem Soc 2009, 156:K223. 10.1149/1.3232202CrossRef 11. Astrova E, Tolmachev V: Effective refractive index and composition of oxidized porous silicon films. Mater Sci Eng B 2000, 69–70:142–148.CrossRef 12. Theiβ W: The dielectric function of porous silicon – how to obtain it and how to use it. Thin Solid Films 1996, 276:7–12. 10.1016/0040-6090(95)08036-8CrossRef 13. Sarafis P, Hourdakis E, Nassiopoulou AG: Dielectric permittivity of Porous Si for use as substrate material in Si-integrated RF devices. IEEE Trans Electron Devices 2013, 60:1436–1443.CrossRef 14. Sarafis P, Hourdakis E, Nassiopoulou AG: Porous Si dielectric parameter extraction for use in RF passive device integration : Measurements and simulations. 43rd Eur. Solid-State Device Res. Conf. Bucharest
2013, 99–102. 15. Neve CR, Ben Alia K, Malaquin C, Allibert F, Desbonnets E, Bertrand I, Van Den Daele W, Raskin J-P: RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications. In 2013 IEEE 13th Top. Meet. Silicon Monolith. Integr. MG-132 mouse Interleukin-2 receptor Circuits RF Syst. Austin, TX, USA: IEEE; 2013:15–17.CrossRef 16. Ben AK, Neve CR, Gharsallah A, Raskin J: RF performance of SOI CMOS technology on commercial 200-mm enhanced signal integrity high resistivity SOI substrate. IEEE Trans
Electron Devices 2014, 61:722–728.CrossRef 17. Lederer D, Raskin J-P: Effective resistivity of fully-processed SOI substrates. Solid State Electron 2005, 49:491–496. 10.1016/j.sse.2004.12.003CrossRef 18. Mangan AM, Voinigescu SP, Tazlauanu M: De-embedding transmission line measurements for accurate modeling of IC designs. IEEE Trans Electron Devices 2006, 53:235–241.CrossRef 19. Lamb JW: Miscellaneous data on materials for millimetre and submillimetre optics. Int J Infrared Millimeter Waves 1996, 17:1997–2034. 10.1007/BF02069487CrossRef 20. Cheng H-J, Whitaker JF, Weller TM, Katehi LPB: Terahertz-bandwidth characteristics of coplanar transmission lines on low permittivity substrates. IEEE Trans Microw Theory Tech 1994, 42:2399–2406. 10.1109/22.339773CrossRef 21. Ben-Chorin M, Möller F, Koch F: Nonlinear electrical transport in porous silicon. Phys Rev B 1994, 49:2981–2984. 10.1103/PhysRevB.49.2981CrossRef 22. Ben-Chorin M, Möller F, Koch F, Schirmacher W, Eberhard M: Hopping transport on a fractal: ac conductivity of porous silicon. Phys Rev B 1995, 51:2199–2213.CrossRef 23. Campos AM, Torres J, Giraldo JJ: Porous silicon dielectric function modeling from effective medium theories.