To determine the effect AZD2281 of this energy transfer process on the luminescence properties of Er3+ in the SROEr films with different Si NCs microstructures, the PL spectra of Er3+ in the films are provided, as shown in Figure 4a. Interestingly,

the PL intensity of Er3+ decreases with the increase of the Si excesses, which is completely opposite to the evolution of the η but coincident with that of the original PL intensity of Si NCs, as shown in Figures 2 and 3. To further determine the effect of Si NCs microstructures on the transition between intra-4f levels of Er3+ ions (4I13/2 – 4I15/2), PL decay curves at the emission wavelength of Er3+ (1.54 μm) are provided, as shown in Figure 4b. From their fittings by stretched exponential function, we obtained that the characteristic decay time is on the order of millisecond (the curves of SROEr with the Si excess of 36% and 58% are not shown here). The largest value is obtained from the film with the lowest Si excess, which means

that higher Si excess and the coalescence of Si NCs would enhance the nonradiative recombination of Er3+ ions. Nevertheless, the amount of Si excess has an insignificant effect on the luminescence performance of Er3+ as the variation of the characteristic decay time can be negligible, as shown in Figure 4b. Since the size and density of Si NCs for the sample with the Si excess of 36% were similar to the one with the Si excess of 88%, as shown in Figure 1b,d, while the PL intensity is significantly decreased, we ascribe the main origin of this decreased https://www.selleckchem.com/products/Adriamycin.html PL intensity as the microstructural differences of the Si NCs in these samples. Furthermore, the decrease of the oscillator strength with the increasing size of

the Si NCs due to the coalescence might be also a partial reason for this decreased PL intensity. Besides, the influence of Si excess on the percentage of optically active Er3+ ions was also considered. Since the excitation energy in our experiment is especially low (about 3 × 1016 cm−2 s−1), the number of Er3+ ions contributing to the 1.5-μm emission could be assumed to be equal to the concentration of Si NCs acting as sensitizers [21]. see more Actually, Si NCs with similar densities have been obtained from SROEr films with different Si excesses in our experiment, as shown in Figure 1. It means that the influence of the percentage of optically active Er3+ on the luminescent property of the samples with different amounts of the Si excess is insignificant. Therefore, the microstructures of Si NCs play an extremely important role on the emission of Er3+ ions. The Si NCs with separated microstructures should be prepared for the further improvement of the luminescence performance of Er3+ ions. Figure 4 Room-temperature PL spectra and decay curves of Er 3+ ion. (a) Room-temperature PL spectra of Er3+ ion in the SROEr films.