Microelectron Eng 2010, 87:2411–2415 10 1016/j mee 2010 04 016Cr

Microelectron Eng 2010, 87:2411–2415. 10.1016/j.mee.2010.04.016CrossRef 59. Ye X, Liu H, Ding Y, Li H, Lu B: Research on the cast molding process for high quality PDMS molds. Microelectron Eng 2009, 86:310–313. 10.1016/j.mee.2008.10.011CrossRef 60. Schleunitz A, Spreu C, Mäkelä T, Haatainen T, Klukowska A, Schift H: Hybrid working stamps for high speed roll-to-roll nanoreplication with molded sol–gel relief on a metal backbone. Microelectron Eng 2011, 88:2113–2116. 10.1016/j.mee.2011.02.019CrossRef 61. Hauser H, Michl B, Kübler V, Schwarzkopf S, Müller C, Hermle M, Bläsi B: Nanoimprint lithography for honeycomb texturing of multicrystalline silicon. Energy Procedia

2011, 8:648–653.CrossRef 62. Odom TW, Love JC, Wolfe DB, Paul KE, Whitesides GM: https://www.selleckchem.com/products/AZD7762.html Improved pattern Bioactive Compound Library screening transfer in soft lithography using composite stamps. Langmuir 2002, 18:5314–5320. 10.1021/la020169lCrossRef 63. Unno N, Taniguchi J: Fabrication of the metal nano pattern on plastic substrate using roll nanoimprint. Microelectron Eng 2011, 88:2149–2153. 10.1016/j.mee.2011.02.006CrossRef 64. Cannon AH, King WP: Casting metal microstructures

from a flexible and reusable mold. J Micromech Microeng 2009, 19:095016. 10.1088/0960-1317/19/9/095016CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions NK did the overall review before 2012 and drafted the manuscript. OSG did the updates of the latest development of NIL after 2012 and helped draft the manuscript and sequence alignment. LTP did the updates of the latest development of mold fabrication

and helped draft the manuscript. KM is the main coordinator of this manuscript and did the revision of the manuscript. All authors read and approved the final manuscript.”
“Background Highly porous Si is a material composed of interconnected Si nanowires and nanocrystals separated by voids [1, 2]. Due to its structure and morphology, it shows much lower thermal conductivity than that of bulk crystalline Si, which is even below the amorphous limit at porosities exceeding 60%. This is SN-38 mw attributed to phonon confinement in the Si nanostructures and phonon scattering at porous Si large internal surface. The room temperature thermal conductivity of porous Si was extensively Methamphetamine investigated in the literature (see a list in [3]), and the material is now established as an effective low thermal conductivity substrate for Si-based thermal devices [4], including flow sensors [5–8], gas sensors [9], accelerometers [10], and thermoelectric devices [11, 12]. An increasing interest is recently devoted to the potential use of porous Si as a thermoelectric material with high figure of merit (ZT), achievable with its low thermal conductivity, combined with an intentional doping to increase its electrical conductivity [13–15].

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