Authors’ contributions ZDM wrote the paper and prepared the samples. LZ, SY, QS, and KU analyzed the sample. KYC performed the TEM. WCO coordinated the study as the corresponding author. All authors read and approved the final manuscript.”
“Correction In the Methods section of our published article [1],
the evolution of grain size and microstrain in the Mg and Cu is estimated using the single-line method of diffraction line-broadening analysis. However, a very important reference is omitted, and this method founder’s publication should be cited here [2]. selleck Moreover, the experimental results contained in this paper were obtained by the first author in cooperation with Dr. U. Welzel, Dr. E. Bischoff and Prof. Dr. E.J. Mittemeijer (all Max Planck Institute for Intelligent selleck screening library Systems) during the stay of the first author in the department of Prof. Dr. Mittemeijer. Thus the authors would like to express our gratitude to them in the Acknowledgements section of this published article [1]. References 1. Ma ZQ, Liu YC, Yu LM, Cai Q: Investigation of phase composition and nanoscale microstructure of high-energy ball-milled MgCu sample.
Nanoscale Res Lett 2012, 7:390.CrossRef 2. de Keijser TH, Langford JI, Mittemeijer EJ, Vogels ABP: Use of the Voigt function in a single-line method for the analysis of X-ray diffraction line broadening. J Appl Cryst 1982, 15:308–314.CrossRef”
“Background Ultraviolet (UV) photodetector has been a popular Doxorubicin research issue for its potential applications in a wide range of fields, such as remote control, chemical analysis, water purification, flame detection, early missile plume detection, and secure space-to-space communications [1]. To avoid the use of filters and achieve visible-blind
operation, wide bandgap semiconductors, such as GaN, SiC, ZnO, and TiO2[2–8], have been studied during the last decade for wide-spreading usage in photodetection, especially in the ultraviolet region. Among conventional available UV photodetectors, quite many kinds of structures have been fabricated, which in most cases are based on epitaxial growth process and various solid-state junction structures. Typical examples are photodetectors based on p-n junction, p-i-n photodiodes, Schottky barrier (SB), metal–semiconductor-metal, and metal-insulator-semiconductor structures [9–15]. These photodetectors typically require an external bias as the driving force to prevent the recombination of photogenerated electron–hole pairs. For large-area two-dimensional arrays that contain huge amounts of small UV sensors, energy supply will be one of the main challenges for such sensor systems. Recently, self-powered nanodevices and nanosystems have attracted lots of attention due to their various advantages. Xu et al.